Samsung Semiconductor, Inc. K8S5715EZC-DE1E0 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K8S5715EZC-DE1E0

生命周期状态
Active-Unconfirmed
REACH
REACH compliant
说明
Flash, 16MX16, 100ns, PBGA44
类别
Semiconductors Memory ICs Flash Memories FLASH

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.51
SB Code
8542.32.00.50

Type
SLC NAND TYPE
Boot Block
BOTTOM/TOP
Ready/Busy
YES
Technology
CMOS
Toggle Bit
YES
Width (mm)
6.2
Length (mm)
7.7
Data Polling
YES
JESD-30 Code
R-PBGA-B44
Memory Width
16
Package Code
VFBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
FLASH
Operating Mode
ASYNCHRONOUS/SYNCHRONOUS
Parallel/Serial
PARALLEL
DLA Qualification
Not Qualified
Temperature Grade
OTHER
Terminal Position
BOTTOM
Additional Feature
SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
Memory Organization
16MX16
Number of Functions
1
Number of Terminals
44
Sector Size (words)
64K
Terminal Pitch (mm)
0.5
Access Time-Max (ns)
100
Number of Words Code
16M
Memory Density (bits)
268435456
Package Body Material
PLASTIC/EPOXY
Command User Interface
YES
Common Flash Interface
Y
Number of Sectors/Size
256
Output Characteristics
3-STATE
Seated Height-Max (mm)
1
Supply Voltage-Max (V)
1.95
Supply Voltage-Min (V)
1.7
Supply Voltage-Nom (V)
1.8
Number of Words (words)
16777216
Programming Voltage (V)
1.8
Standby Current-Max (A)
0.00012
Supply Current-Max (mA)
70
Endurance (Write/Erase Cycles)
100000
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-25