K8S3215ETF-HE7C
Samsung Semiconductor, Inc.
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- 说明Flash, 2MX16, 70ns, PBGA44
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.51
- SB Code8542.32.00.50
- TypeNOR TYPE
- Width5 mm
- Length7.5 mm
- Endurance100000 Write/Erase Cycles
- Boot BlockTOP
- Ready/BusyYES
- TechnologyCMOS
- Toggle BitYES
- Sector Size4K,32K Words
- Data PollingYES
- JESD-30 CodeR-PBGA-B44
- Memory Width16
- Organization2MX16
- Package CodeVFBGA
- JESD-609 Codee2
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density33554432 bit
- Memory IC TypeFLASH
- Operating ModeSYNCHRONOUS
- Terminal Pitch0.5 mm
- Access Time-Max70 ns
- Number of Words2097152 words
- Parallel/SerialPARALLEL
- Terminal FinishTIN SILVER COPPER NICKEL
- Seated Height-Max1 mm
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Supply Current-Max70 mA
- Number of Functions1
- Number of Terminals44
- Programming Voltage1.8 V
- Standby Current-Max5.0E-5 Amp
- Number of Words Code2M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Command User InterfaceYES
- Common Flash InterfaceYES
- Number of Sectors/Size8,63
- Output Characteristics3-STATE
- Package Equivalence CodeBGA44,8X14,20
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-25 Cel
- Supply Voltage-Max (Vsup)1.95 V
- Supply Voltage-Min (Vsup)1.7 V
- Supply Voltage-Nom (Vsup)1.8 V
- Moisture Sensitivity Level3
- Peak Reflow Temperature (Cel)260
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