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K8S1115EZC-DE1E0

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc. K8S1115EZC-DE1E0
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.51
  • SB Code
    8542.32.00.50
  • Type
    NOR TYPE
  • Boot Block
    BOTTOM/TOP
  • Technology
    CMOS
  • Toggle Bit
    YES
  • Width (mm)
    9
  • Length (mm)
    11
  • Data Polling
    YES
  • JESD-30 Code
    R-PBGA-B64
  • Memory Width
    16
  • Package Code
    VFBGA
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • Memory IC Type
    FLASH
  • Operating Mode
    ASYNCHRONOUS
  • Parallel/Serial
    PARALLEL
  • DLA Qualification
    Not Qualified
  • Temperature Grade
    OTHER
  • Terminal Position
    BOTTOM
  • Additional Feature
    SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
  • Memory Organization
    32MX16
  • Number of Functions
    1
  • Number of Terminals
    64
  • Sector Size (words)
    64K
  • Terminal Pitch (mm)
    0.5
  • Access Time-Max (ns)
    100
  • Number of Words Code
    32M
  • Memory Density (bits)
    536870912
  • Package Body Material
    PLASTIC/EPOXY
  • Command User Interface
    YES
  • Common Flash Interface
    YES
  • Number of Sectors/Size
    512
  • Seated Height-Max (mm)
    1
  • Supply Voltage-Max (V)
    1.95
  • Supply Voltage-Min (V)
    1.7
  • Supply Voltage-Nom (V)
    1.8
  • Number of Words (words)
    33554432
  • Programming Voltage (V)
    1.8
  • Standby Current-Max (A)
    3.0E-5
  • Supply Current-Max (mA)
    70
  • Package Equivalence Code
    BGA64,10X14,20
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Operating Temperature-Max (Cel)
    85
  • Operating Temperature-Min (Cel)
    -25
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED

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