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K8S1115EBC-FE1ET

Samsung Semiconductor, Inc.

K8S1115EBC-FE1ET 产品规格书
Samsung Semiconductor, Inc. K8S1115EBC-FE1ET
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.51
  • SB Code
    8542.32.00.50
  • Type
    NOR TYPE
  • Boot Block
    BOTTOM
  • Ready/Busy
    YES
  • Technology
    CMOS
  • Toggle Bit
    YES
  • Data Polling
    YES
  • JESD-30 Code
    R-PBGA-B64
  • Memory Width
    16
  • Package Code
    FBGA
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • Memory IC Type
    FLASH
  • Parallel/Serial
    PARALLEL
  • DLA Qualification
    Not Qualified
  • Temperature Grade
    OTHER
  • Terminal Position
    BOTTOM
  • Memory Organization
    32MX16
  • Number of Terminals
    64
  • Sector Size (words)
    16K,64K
  • Terminal Pitch (mm)
    0.5
  • Access Time-Max (ns)
    95
  • Number of Words Code
    32M
  • Memory Density (bits)
    536870912
  • Package Body Material
    PLASTIC/EPOXY
  • Command User Interface
    YES
  • Common Flash Interface
    YES
  • Number of Sectors/Size
    4,511
  • Supply Voltage-Nom (V)
    1.8
  • Number of Words (words)
    33554432
  • Programming Voltage (V)
    2.7
  • Standby Current-Max (A)
    3.0E-5
  • Supply Current-Max (mA)
    70
  • Package Equivalence Code
    BGA64,10X14,20
  • Moisture Sensitivity Level
    1
  • Operating Temperature-Max (Cel)
    85
  • Operating Temperature-Min (Cel)
    -25

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