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K8P2815UQB-DI4B0

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc. K8P2815UQB-DI4B0
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.51
  • SB Code
    8542.32.00.50
  • Type
    NOR TYPE
  • Width
    11 mm
  • Length
    13 mm
  • Page Size
    8 words
  • Boot Block
    BOTTOM/TOP
  • Ready/Busy
    YES
  • Technology
    CMOS
  • Toggle Bit
    YES
  • Sector Size
    4K,32K Words
  • Data Polling
    YES
  • JESD-30 Code
    R-PBGA-B64
  • Memory Width
    16
  • Organization
    8MX16
  • Package Code
    TBGA
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, THIN PROFILE Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • Memory Density
    134217728 bit
  • Memory IC Type
    FLASH
  • Operating Mode
    ASYNCHRONOUS
  • Terminal Pitch
    1 mm
  • Access Time-Max
    60 ns
  • Number of Words
    8388608 words
  • Parallel/Serial
    PARALLEL
  • Seated Height-Max
    1.2 mm
  • Temperature Grade
    INDUSTRIAL
  • Terminal Position
    BOTTOM
  • Supply Current-Max
    55 mA
  • Number of Functions
    1
  • Number of Terminals
    64
  • Programming Voltage
    2.7 V
  • Standby Current-Max
    3.0E-5 Amp
  • Number of Words Code
    8M
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Command User Interface
    YES
  • Common Flash Interface
    YES
  • Number of Sectors/Size
    16,254
  • Package Equivalence Code
    BGA80,8X12,32
  • Operating Temperature-Max
    85 Cel
  • Operating Temperature-Min
    -40 Cel
  • Supply Voltage-Max (Vsup)
    3.6 V
  • Supply Voltage-Min (Vsup)
    2.7 V
  • Supply Voltage-Nom (Vsup)
    3 V
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED

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