Samsung Semiconductor, Inc. K8A6415ETB-DE7B0 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K8A6415ETB-DE7B0

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Flash, 4MX16, 90ns
类别
Semiconductors Memory ICs Flash Memories FLASH

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.51
SB Code
8542.32.00.50

Technology
CMOS
JESD-30 Code
X-PBGA-B
Memory Width
16
Package Code
BGA
Package Shape
UNSPECIFIED
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e1
Memory IC Type
FLASH
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
DLA Qualification
Not Qualified
Temperature Grade
OTHER
Terminal Position
BOTTOM
Additional Feature
SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
Memory Organization
4MX16
Number of Functions
1
Access Time-Max (ns)
90
Number of Words Code
4M
Memory Density (bits)
67108864
Package Body Material
PLASTIC/EPOXY
Supply Voltage-Max (V)
1.95
Supply Voltage-Min (V)
1.7
Supply Voltage-Nom (V)
1.8
Number of Words (words)
4194304
Programming Voltage (V)
1.8
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-25