Samsung Semiconductor, Inc. K7R640982M-EI160 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K7R640982M-EI160

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
QDR SRAM, 8MX9, 0.5ns, CMOS, PBGA165
类别
Semiconductors Memory ICs SRAMs QDR SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
SEPARATE
Technology
CMOS
Width (mm)
15
Length (mm)
17
JESD-30 Code
R-PBGA-B165
Memory Width
9
Package Code
LBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, LOW PROFILE Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
QDR SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Additional Feature
PIPELINED ARCHITECTURE
Memory Organization
8MX9
Number of Functions
1
Number of Terminals
165
Terminal Pitch (mm)
1
Access Time-Max (ns)
0.5
Number of Words Code
8M
Memory Density (bits)
75497472
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.4
Supply Voltage-Max (V)
1.9
Supply Voltage-Min (V)
1.7
Supply Voltage-Nom (V)
1.8
Number of Words (words)
8388608
Standby Voltage-Min (V)
1.7
Package Equivalence Code
BGA165,11X15,40
Clock Frequency-Max (MHz)
166
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED