Samsung Semiconductor, Inc. K7P801811B-HC25T | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K7P801811B-HC25T

生命周期状态
Active-Unconfirmed
REACH
REACH compliant
说明
Late-Write SRAM, 512KX18, 2ns, CMOS, PBGA119
类别
Semiconductors Memory ICs SRAMs LATE-WRITE SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PBGA-B119
Memory Width
18
Package Code
BGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e0
Memory IC Type
LATE-WRITE SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
BOTTOM
Memory Organization
512KX18
Number of Terminals
119
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
2
Number of Words Code
512K
Memory Density (bits)
9437184
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Number of Words (words)
524288
Standby Current-Max (A)
0.07
Standby Voltage-Min (V)
3.15
Supply Current-Max (mA)
500
Package Equivalence Code
BGA119,7X17,50
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0