Samsung Semiconductor, Inc. K7N801801A-EC13 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K7N801801A-EC13

生命周期状态
Active-Unconfirmed
RoHS
符合RoHS标准
REACH
REACH compliant
说明
ZBT SRAM, 512KX18, 4.2ns, CMOS, PBGA119
类别
Semiconductors Memory ICs SRAMs ZBT SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PBGA-B119
Memory Width
18
Package Code
BGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
ZBT SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
BOTTOM
Memory Organization
512KX18
Number of Terminals
119
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
4.2
Number of Words Code
512K
Memory Density (bits)
9437184
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Number of Words (words)
524288
Standby Current-Max (A)
0.05
Standby Voltage-Min (V)
3.14
Supply Current-Max (mA)
380
Package Equivalence Code
BGA119,7X17,50
Clock Frequency-Max (MHz)
133
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0