K7N327245M-HC250
Samsung Semiconductor, Inc.
- 生命周期状态Discontinued
- 说明ZBT SRAM, 512KX72, 2.6ns, CMOS, PBGA209
- 类别
- ECCN3A991.b.2.a
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- TechnologyCMOS
- Width (mm)14
- Length (mm)22
- JESD-30 CodeR-PBGA-B209
- Memory Width72
- Package CodeBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeZBT SRAM
- Operating ModeSYNCHRONOUS
- Parallel/SerialPARALLEL
- DLA QualificationNot Qualified
- Temperature GradeCOMMERCIAL
- Terminal PositionBOTTOM
- Additional FeaturePIPELINED ARCHITECTURE
- Memory Organization512KX72
- Number of Functions1
- Number of Terminals209
- Terminal Pitch (mm)1
- Access Time-Max (ns)2.6
- Number of Words Code512K
- Memory Density (bits)37748736
- Package Body MaterialPLASTIC/EPOXY
- Seated Height-Max (mm)2.2
- Supply Voltage-Max (V)2.625
- Supply Voltage-Min (V)2.375
- Supply Voltage-Nom (V)2.5
- Number of Words (words)524288
- Operating Temperature-Max (Cel)70
- Operating Temperature-Min (Cel)0
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K7N327245M-HC250