Samsung Semiconductor, Inc. K7N167245A-HC25 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K7N167245A-HC25

生命周期状态
Discontinued
说明
ZBT SRAM, 256KX72, 2.6ns, CMOS, PBGA209
类别
Semiconductors Memory ICs SRAMs ZBT SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
Width (mm)
14
Length (mm)
22
JESD-30 Code
R-PBGA-B209
Memory Width
72
Package Code
BGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e0
Memory IC Type
ZBT SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
BOTTOM
Memory Organization
256KX72
Number of Functions
1
Number of Terminals
209
Terminal Pitch (mm)
1
Access Time-Max (ns)
2.6
Number of Words Code
256K
Memory Density (bits)
18874368
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
2.2
Supply Voltage-Max (V)
2.625
Supply Voltage-Min (V)
2.375
Supply Voltage-Nom (V)
2.5
Number of Words (words)
262144
Standby Current-Max (A)
0.06
Standby Voltage-Min (V)
2.38
Supply Current-Max (mA)
620
Package Equivalence Code
BGA209,11X19,40
Clock Frequency-Max (MHz)
250
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0