Samsung Semiconductor, Inc. K7N163645M-QC16T | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K7N163645M-QC16T

生命周期状态
Discontinued
说明
ZBT SRAM, 512KX36, 3.5ns, CMOS, PQFP100
类别
Semiconductors Memory ICs SRAMs ZBT SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PQFP-G100
Memory Width
36
Package Code
QFP
Package Shape
RECTANGULAR
Package Style
FLATPACK Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e0
Memory IC Type
ZBT SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
QUAD
Memory Organization
512KX36
Number of Terminals
100
Terminal Pitch (mm)
0.635
Access Time-Max (ns)
3.5
Number of Words Code
512K
Memory Density (bits)
18874368
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Nom (V)
2.5
Number of Words (words)
524288
Standby Current-Max (A)
0.01
Standby Voltage-Min (V)
2.38
Supply Current-Max (mA)
320
Package Equivalence Code
QFP100,.63X.87
Moisture Sensitivity Level
3
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0