K7N163631B-FI25
Samsung Semiconductor, Inc.
- 生命周期状态Discontinued
- 说明ZBT SRAM, 512KX36, 2.6ns, CMOS, PBGA165
- 类别
- ECCN3A991.b.2.a
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PBGA-B165
- Memory Width36
- Package CodeBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeZBT SRAM
- Operating ModeSYNCHRONOUS
- Parallel/SerialPARALLEL
- DLA QualificationNot Qualified
- Temperature GradeINDUSTRIAL
- Terminal PositionBOTTOM
- Memory Organization512KX36
- Number of Terminals165
- Terminal Pitch (mm)1
- Access Time-Max (ns)2.6
- Number of Words Code512K
- Memory Density (bits)18874368
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Number of Words (words)524288
- Standby Current-Max (A)0.13
- Standby Voltage-Min (V)3.14
- Supply Current-Max (mA)360
- Package Equivalence CodeBGA165,11X15,40
- Clock Frequency-Max (MHz)250
- Moisture Sensitivity Level1
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-40
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K7N163631B-FI25