Samsung Semiconductor, Inc. K7N161801A-FI16 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K7N161801A-FI16

生命周期状态
Discontinued
REACH
REACH compliant
说明
ZBT SRAM, 1MX18, 3.5ns, CMOS, PBGA165
类别
Semiconductors Memory ICs SRAMs ZBT SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
Width (mm)
13
Length (mm)
15
JESD-30 Code
R-PBGA-B165
Memory Width
18
Package Code
LBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, LOW PROFILE Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e0
Memory IC Type
ZBT SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Additional Feature
PIPELINED ARCHITECTURE
Memory Organization
1MX18
Number of Functions
1
Number of Terminals
165
Terminal Pitch (mm)
1
Access Time-Max (ns)
3.5
Number of Words Code
1M
Memory Density (bits)
18874368
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.4
Supply Voltage-Max (V)
3.465
Supply Voltage-Min (V)
3.135
Supply Voltage-Nom (V)
3.3
Number of Words (words)
1048576
Standby Current-Max (A)
0.06
Standby Voltage-Min (V)
3.14
Supply Current-Max (mA)
350
Package Equivalence Code
BGA165,11X15,40
Clock Frequency-Max (MHz)
167
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40