K7M803625A-HC90
Samsung Semiconductor, Inc.
- 生命周期状态Discontinued
- 说明ZBT SRAM, 256KX36, 9ns, CMOS, PBGA119
- 类别
- ECCN3A991.b.2.a
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)14
- Length (mm)22
- JESD-30 CodeR-PBGA-B119
- Memory Width36
- Package CodeBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY Meter
- Surface MountYES
- Terminal FormBALL
- J-STD-609 Codee0
- Memory IC TypeZBT SRAM
- Operating ModeSYNCHRONOUS
- Parallel/SerialPARALLEL
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Temperature GradeCOMMERCIAL
- Terminal PositionBOTTOM
- Memory Organization256KX36
- Number of Functions1
- Number of Terminals119
- Terminal Pitch (mm)1.27
- Access Time-Max (ns)9
- Number of Words Code256K
- Memory Density (bits)9437184
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Supply Voltage-Max (V)3.465
- Supply Voltage-Min (V)3.135
- Supply Voltage-Nom (V)3.3
- Number of Words (words)262144
- Standby Current-Max (A)0.05
- Standby Voltage-Min (V)3.14
- Supply Current-Max (mA)330
- Package Equivalence CodeBGA119,7X17,50
- Clock Frequency-Max (MHz)100
- Operating Temperature-Max (Cel)70
- Operating Temperature-Min (Cel)0
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