Samsung Semiconductor, Inc. K7M403625M-QC90 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K7M403625M-QC90

生命周期状态
Discontinued
说明
ZBT SRAM, 128KX36, 9ns, CMOS
类别
Semiconductors Memory ICs SRAMs ZBT SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
Memory Width
36
J-STD-609 Code
e0
Memory IC Type
ZBT SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Memory Organization
128KX36
Access Time-Max (ns)
9
Number of Words Code
128K
Memory Density (bits)
4718592
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Number of Words (words)
131072
Standby Current-Max (A)
0.03
Standby Voltage-Min (V)
3.14
Supply Current-Max (mA)
260
Clock Frequency-Max (MHz)
83
Moisture Sensitivity Level
3
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0