Samsung Semiconductor, Inc. K7D321874A-HC45 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K7D321874A-HC45

生命周期状态
Discontinued
说明
DDR SRAM, 2MX18, 2.5ns, CMOS, PBGA153
类别
Semiconductors Memory ICs SRAMs DDR SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
Width (mm)
14
Length (mm)
22
JESD-30 Code
R-PBGA-B153
Memory Width
18
Package Code
HBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, HEAT SINK/SLUG Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e0
Memory IC Type
DDR SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
BOTTOM
Additional Feature
PIPELINED ARCHITECTURE
Memory Organization
2MX18
Number of Functions
1
Number of Terminals
153
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
2.5
Number of Words Code
2M
Memory Density (bits)
37748736
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
2.75
Supply Voltage-Max (V)
2.6
Supply Voltage-Min (V)
1.7
Supply Voltage-Nom (V)
2.5
Number of Words (words)
2097152
Standby Current-Max (A)
0.3
Standby Voltage-Min (V)
1.7
Supply Current-Max (mA)
1000
Package Equivalence Code
BGA153,9X17,50
Clock Frequency-Max (MHz)
455
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0