Samsung Semiconductor, Inc. K7D163671B-HC30T | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K7D163671B-HC30T

生命周期状态
Discontinued
REACH
REACH compliant
说明
Application Specific SRAM, 512KX36, 1.9ns, CMOS, PBGA153
类别
Semiconductors Memory ICs SRAMs APPLICATION SPECIFIC SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PBGA-B153
Memory Width
36
Package Code
BGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
APPLICATION SPECIFIC SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
BOTTOM
Memory Organization
512KX36
Number of Terminals
153
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
1.9
Number of Words Code
512K
Memory Density (bits)
18874368
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Number of Words (words)
524288
Standby Voltage-Min (V)
2.37
Supply Current-Max (mA)
400
Package Equivalence Code
BGA153,9X17,50
Clock Frequency-Max (MHz)
300
Moisture Sensitivity Level
1
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0