Samsung Semiconductor, Inc. K6R3024V1D-HI12 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K6R3024V1D-HI12

生命周期状态
Discontinued
REACH
REACH compliant
说明
SRAM Module, 128KX24, 12ns, CMOS, PBGA119
类别
Semiconductors Memory ICs SRAMs SRAM MODULE

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
Width (mm)
14
Length (mm)
22
JESD-30 Code
R-PBGA-B119
Memory Width
24
Package Code
BGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
SRAM MODULE
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Memory Organization
128KX24
Number of Functions
1
Number of Terminals
119
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
12
Number of Words Code
128K
Memory Density (bits)
3145728
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Max (V)
3.6
Supply Voltage-Min (V)
3
Supply Voltage-Nom (V)
3.3
Number of Words (words)
131072
Standby Current-Max (A)
0.015
Standby Voltage-Min (V)
3
Supply Current-Max (mA)
130
Package Equivalence Code
BGA119,7X17,50
Peak Reflow Temperature (Cel)
240
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40
Time@Peak Reflow Temperature-Max (s)
30