Samsung Semiconductor, Inc. K4ZAF325BM-HC160 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K4ZAF325BM-HC160

生命周期状态
EOL
REACH
REACH compliant
说明
GDDR6 DRAM, 512MX32, CMOS
类别
Semiconductors Memory ICs DRAMs GDDR6 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

Technology
CMOS
JESD-30 Code
R-PBGA-B180
Memory Width
32
Organization
512MX32
Package Shape
RECTANGULAR
Surface Mount
YES
Terminal Form
BALL
Memory Density
17179869184 bit
Memory IC Type
GDDR6 DRAM
Refresh Cycles
16384
Number of Ports
1
Number of Words
536870912 words
Terminal Position
BOTTOM
Number of Functions
1
Number of Terminals
180
Number of Words Code
512M
Package Body Material
PLASTIC/EPOXY