Samsung Semiconductor, Inc. K4Y54164UF-JCC3 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K4Y54164UF-JCC3

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Rambus DRAM, 16MX16, 53.6ns, CMOS, PBGA104
类别
Semiconductors Memory ICs DRAMs RAMBUS DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.24
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PBGA-B104
Memory Width
16
Organization
16MX16
Package Code
BGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
Memory Density
268435456 bit
Memory IC Type
RAMBUS DRAM
Refresh Cycles
16384
Terminal Pitch
0.8 mm
Access Time-Max
53.6 ns
Number of Words
16777216 words
Terminal Position
BOTTOM
Supply Current-Max
1200 mA
Number of Terminals
104
Standby Current-Max
0.34 Amp
Number of Words Code
16M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Package Equivalence Code
BGA104,11X16,50/32
Supply Voltage-Nom (Vsup)
1.8 V