Samsung Semiconductor, Inc. K4Y50164UE-JCB3 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K4Y50164UE-JCB3

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
说明
DRAM Chip XDR DRAM 512Mbit 32Mx16 1.8V 100-Pin FBGA T/R
类别
Semiconductors Memory ICs DRAMs RAMBUS DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.28
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PBGA-B100
Memory Width
16
Organization
32MX16
Package Code
BGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
Memory Density
536870912 bit
Memory IC Type
RAMBUS DRAM
Refresh Cycles
32768
Terminal Pitch
0.8 mm
Access Time-Max
35 ns
Number of Words
33554432 words
Temperature Grade
OTHER
Terminal Position
BOTTOM
Supply Current-Max
1150 mA
Number of Terminals
100
Standby Current-Max
0.04 Amp
Number of Words Code
32M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Package Equivalence Code
BGA100,11X16,50/32
Operating Temperature-Max
100 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Nom (Vsup)
1.8 V
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
260