K4Y50084UE-JCC4
Samsung Semiconductor, Inc.
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- 说明Rambus DRAM, 64MX8, 28ns, CMOS, PBGA100
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.28
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PBGA-B100
- Memory Width8
- Organization64MX8
- Package CodeBGA
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density536870912 bit
- Memory IC TypeRAMBUS DRAM
- Refresh Cycles32768
- Terminal Pitch0.8 mm
- Access Time-Max28 ns
- Number of Words67108864 words
- Terminal FinishMATTE TIN
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Supply Current-Max1200 mA
- Number of Terminals100
- Standby Current-Max0.04 Amp
- Number of Words Code64M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeBGA100,11X16,50/32
- Operating Temperature-Max100 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Nom (Vsup)1.8 V
- Moisture Sensitivity Level1
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