K4X56163PI-LEC30
Samsung Semiconductor, Inc.
- 生命周期状态Discontinued
- 说明DDR1 DRAM, 16MX16, 6ns, CMOS, PBGA60
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.24
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PBGA-B60
- Memory Width16
- Organization16MX16
- Package CodeFBGA
- JESD-609 Codee1
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density268435456 bit
- Memory IC TypeDDR1 DRAM
- Refresh Cycles8192
- Terminal Pitch0.8 mm
- Access Time-Max6 ns
- Number of Words16777216 words
- Terminal FinishTIN SILVER COPPER
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Supply Current-Max95 mA
- Number of Terminals60
- Standby Current-Max1.0E-5 Amp
- Number of Words Code16M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Sequential Burst Length2,4,8,16
- Interleaved Burst Length2,4,8,16
- Package Equivalence CodeBGA60,9X10,32
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-25 Cel
- Supply Voltage-Nom (Vsup)1.8 V
- Clock Frequency-Max (fCLK)133 MHz
- Moisture Sensitivity Level3
- Peak Reflow Temperature (Cel)240
K4X56163PI-LEC30有0家供应商货源可供购买或竞价
提交询价
您的询价单将直接发送给我们的销售专家: Pari
提交询价
K4X56163PI-LEC30