Samsung Semiconductor, Inc. K4X56163PE-LGC2 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K4X56163PE-LGC2

生命周期状态
Active-Unconfirmed
REACH
REACH compliant
说明
DDR1 DRAM, 16MX16, 2ns, CMOS, PBGA60
类别
Semiconductors Memory ICs DRAMs DDR1 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.24
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PBGA-B60
Memory Width
16
Organization
16MX16
Package Code
FBGA
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory Density
268435456 bit
Memory IC Type
DDR1 DRAM
Refresh Cycles
8192
Terminal Pitch
0.8 mm
Access Time-Max
2 ns
Number of Words
16777216 words
Terminal Finish
Tin/Lead (Sn/Pb)
Temperature Grade
OTHER
Terminal Position
BOTTOM
Supply Current-Max
80 mA
Number of Terminals
60
Standby Current-Max
0.0003 Amp
Number of Words Code
16M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Sequential Burst Length
2,4,8
Interleaved Burst Length
2,4,8
Package Equivalence Code
BGA60,9X10,32
Operating Temperature-Max
85 Cel
Operating Temperature-Min
-25 Cel
Supply Voltage-Nom (Vsup)
1.8 V
Clock Frequency-Max (fCLK)
100 MHz