Samsung Semiconductor, Inc. K4X4G303PD-AGD8 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K4X4G303PD-AGD8

生命周期状态
Discontinued
说明
DDR1 DRAM, 128MX32, CMOS
类别
Semiconductors Memory ICs DRAMs DDR1 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

Width
12 mm
Length
12 mm
Technology
CMOS
Access Mode
FOUR BANK PAGE BURST
JESD-30 Code
S-PBGA-B168
Memory Width
32
Organization
128MX32
Package Code
BGA
Package Shape
SQUARE
Surface Mount
YES
Terminal Form
BALL
Memory Density
4294967296 bit
Memory IC Type
DDR1 DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
Number of Words
134217728 words
Terminal Position
BOTTOM
Number of Functions
1
Number of Terminals
168
Number of Words Code
128M
Package Body Material
PLASTIC/EPOXY
Supply Voltage-Nom (Vsup)
1.8 V
Clock Frequency-Max (fCLK)
800 MHz