Samsung Semiconductor, Inc. K4X28163PH-W100 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K4X28163PH-W100

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR1 DRAM, 8MX16, 8ns, CMOS
类别
Semiconductors Memory ICs DRAMs DDR1 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
Memory Width
16
Organization
8MX16
Memory Density
134217728 bit
Memory IC Type
DDR1 DRAM
Refresh Cycles
4096
Access Time-Max
8 ns
Number of Words
8388608 words
Supply Current-Max
100 mA
Standby Current-Max
1.0E-5 Amp
Number of Words Code
8M
Qualification Status
Not Qualified
Output Characteristics
3-STATE
Sequential Burst Length
2,4,8,16
Interleaved Burst Length
2,4,8,16
Package Equivalence Code
WAFER
Supply Voltage-Nom (Vsup)
1.8 V
Clock Frequency-Max (fCLK)
133 MHz