Samsung Semiconductor, Inc. K4X1G163PC-FGC6 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K4X1G163PC-FGC6

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR1 DRAM, 1GX16, CMOS, PBGA60
类别
Semiconductors Memory ICs DRAMs DDR1 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

Technology
CMOS
Access Mode
FOUR BANK PAGE BURST
JESD-30 Code
R-PBGA-B60
Memory Width
16
Organization
1GX16
Package Code
BGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
Memory Density
17179869184 bit
Memory IC Type
DDR1 DRAM
Operating Mode
ASYNCHRONOUS
Number of Ports
1
Number of Words
1073741824 words
Terminal Position
BOTTOM
Number of Functions
1
Number of Terminals
60
Number of Words Code
1G
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Supply Voltage-Nom (Vsup)
1.8 V
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
260