Samsung Semiconductor, Inc. K4V1G323PC-SGC6T | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K4V1G323PC-SGC6T

生命周期状态
Discontinued
REACH
REACH compliant
说明
DDR1 DRAM, 32MX32, 5.5ns, CMOS, PBGA152
类别
Semiconductors Memory ICs DRAMs DDR1 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.32
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
S-PBGA-B152
Memory Width
32
Organization
32MX32
Package Code
FBGA
Package Shape
SQUARE
Package Style
GRID ARRAY, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory Density
1073741824 bit
Memory IC Type
DDR1 DRAM
Refresh Cycles
8192
Terminal Pitch
0.635 mm
Access Time-Max
5.5 ns
Number of Words
33554432 words
Temperature Grade
OTHER
Terminal Position
BOTTOM
Supply Current-Max
180 mA
Number of Terminals
152
Standby Current-Max
0.0006 Amp
Number of Words Code
32M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Sequential Burst Length
2,4,8,16
Interleaved Burst Length
2,4,8,16
Package Equivalence Code
BGA152,21X21,25
Operating Temperature-Max
85 Cel
Operating Temperature-Min
-25 Cel
Supply Voltage-Nom (Vsup)
1.8 V
Clock Frequency-Max (fCLK)
166 MHz
Moisture Sensitivity Level
1