Samsung Semiconductor, Inc. K4T51163QE-ZLF7T | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K4T51163QE-ZLF7T

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR2 DRAM, 32MX16, 0.4ns, CMOS, PBGA90
类别
Semiconductors Memory ICs DRAMs DDR2 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.28
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PBGA-B90
Memory Width
16
Package Code
FBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e3
Memory IC Type
DDR2 DRAM
Refresh Cycles
8192
Terminal Finish
MATTE TIN
DLA Qualification
Not Qualified
Temperature Grade
OTHER
Terminal Position
BOTTOM
Memory Organization
32MX16
Number of Terminals
90
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
0.4
Number of Words Code
32M
Memory Density (bits)
536870912
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Nom (V)
1.8
Number of Words (words)
33554432
Sequential Burst Length
4,8
Standby Current-Max (A)
0.005
Supply Current-Max (mA)
280
Interleaved Burst Length
4,8
Package Equivalence Code
BGA90,9X15,32
Clock Frequency-Max (MHz)
400
Moisture Sensitivity Level
1
Operating Temperature-Max (Cel)
95
Operating Temperature-Min (Cel)
0