Samsung Semiconductor, Inc. K4T2G084QA-HCE7000 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K4T2G084QA-HCE7000

生命周期状态
Active-Unconfirmed
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR2 DRAM, 256MX8, 0.4ns, CMOS, PBGA68
类别
Semiconductors Memory ICs DRAMs DDR2 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PBGA-B68
Memory Width
8
Organization
256MX8
Package Code
FBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory Density
2147483648 bit
Memory IC Type
DDR2 DRAM
Refresh Cycles
8192
Terminal Pitch
0.8 mm
Access Time-Max
0.4 ns
Number of Words
268435456 words
Temperature Grade
OTHER
Terminal Position
BOTTOM
Supply Current-Max
350 mA
Number of Terminals
68
Standby Current-Max
0.015 Amp
Number of Words Code
256M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Sequential Burst Length
4,8
Interleaved Burst Length
4,8
Package Equivalence Code
BGA68,9X19,32
Operating Temperature-Max
95 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Nom (Vsup)
1.8 V
Clock Frequency-Max (fCLK)
400 MHz