Samsung Semiconductor, Inc. K4T1G164QJ-BCF80 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K4T1G164QJ-BCF80

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR2 DRAM, 64MX16, 0.35ns, CMOS, PBGA84
类别
Semiconductors Memory ICs DRAMs DDR2 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.32
SB Code
8542.32.00.15

Technology
CMOS
Width (mm)
7.5
Access Mode
MULTI BANK PAGE BURST
Length (mm)
12.5
JESD-30 Code
R-PBGA-B84
Memory Width
16
Package Code
VFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR2 DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
Temperature Grade
OTHER
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Memory Organization
64MX16
Number of Functions
1
Number of Terminals
84
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
0.35
Number of Words Code
64M
Memory Density (bits)
1073741824
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1
Supply Voltage-Max (V)
1.9
Supply Voltage-Min (V)
1.7
Supply Voltage-Nom (V)
1.8
Number of Words (words)
67108864
Standby Current-Max (A)
9.0E-6
Supply Current-Max (mA)
160
Package Equivalence Code
BGA84,9X15,32
Clock Frequency-Max (MHz)
533
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
0
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED