K4T1G084QM-ZCD50
Samsung Semiconductor, Inc.
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明DDR2 DRAM, 128MX8, 0.5ns, CMOS, PBGA68
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.32
- SB Code8542.32.00.15
- Width11 mm
- Length21.7 mm
- TechnologyCMOS
- Access ModeMULTI BANK PAGE BURST
- JESD-30 CodeR-PBGA-B68
- Memory Width8
- Organization128MX8
- Package CodeBGA
- JESD-609 Codee1
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density1073741824 bit
- Memory IC TypeDDR2 DRAM
- Operating ModeSYNCHRONOUS
- Access Time-Max0.5 ns
- Number of Ports1
- Number of Words134217728 words
- Terminal FinishTIN SILVER COPPER
- Seated Height-Max1.2 mm
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Additional FeatureAUTO REFRESH
- Number of Functions1
- Number of Terminals68
- Number of Words Code128M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Operating Temperature-Max95 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)1.9 V
- Supply Voltage-Min (Vsup)1.7 V
- Supply Voltage-Nom (Vsup)1.8 V
- Moisture Sensitivity Level2
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