K4T1G084QD-ZLE7
Samsung Semiconductor, Inc.
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- 说明DDR2 DRAM, 128MX8, 0.4ns, CMOS, PBGA60
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.32
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PBGA-B60
- Memory Width8
- Organization128MX8
- Package CodeFBGA
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density1073741824 bit
- Memory IC TypeDDR2 DRAM
- Refresh Cycles8192
- Terminal Pitch0.8 mm
- Access Time-Max0.4 ns
- Number of Words134217728 words
- Terminal FinishMATTE TIN
- Terminal PositionBOTTOM
- Supply Current-Max265 mA
- Number of Terminals60
- Number of Words Code128M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Sequential Burst Length4,8
- Interleaved Burst Length4,8
- Package Equivalence CodeBGA60,9X11,32
- Supply Voltage-Nom (Vsup)1.8 V
- Clock Frequency-Max (fCLK)400 MHz
- Moisture Sensitivity Level1
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