K4S643234E-TN60T
Samsung Semiconductor, Inc.
- 生命周期状态Discontinued
- 说明Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PDSO-G86
- Memory Width32
- Organization2MX32
- Package CodeTSSOP
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE, THIN PROFILE, SHRINK PITCH Meter
- Surface MountYES
- Terminal FormGULL WING
- Memory Density67108864 bit
- Memory IC TypeSYNCHRONOUS DRAM
- Refresh Cycles4096
- Terminal Pitch0.5 mm
- Access Time-Max5.5 ns
- Number of Words2097152 words
- Terminal FinishTin/Lead (Sn/Pb)
- Temperature GradeOTHER
- Terminal PositionDUAL
- Supply Current-Max170 mA
- Number of Terminals86
- Standby Current-Max0.002 Amp
- Number of Words Code2M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Sequential Burst Length1,2,4,8,FP
- Interleaved Burst Length1,2,4,8
- Package Equivalence CodeTSSOP86,.46,20
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-25 Cel
- Supply Voltage-Nom (Vsup)2.5 V
- Clock Frequency-Max (fCLK)166 MHz
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K4S643234E-TN60T