Samsung Semiconductor, Inc. K4S643234E-TE100 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K4S643234E-TE100

生命周期状态
Discontinued
REACH
REACH compliant
说明
Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86
类别
Semiconductors Memory ICs DRAMs SYNCHRONOUS DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

Width
10.16 mm
Length
22.22 mm
Technology
CMOS
Access Mode
FOUR BANK PAGE BURST
JESD-30 Code
R-PDSO-G86
Memory Width
32
Organization
2MX32
Package Code
TSOP2
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE Meter
Surface Mount
YES
Terminal Form
GULL WING
Memory Density
67108864 bit
Memory IC Type
SYNCHRONOUS DRAM
Operating Mode
SYNCHRONOUS
Terminal Pitch
0.5 mm
Access Time-Max
6 ns
Number of Ports
1
Number of Words
2097152 words
Seated Height-Max
1.2 mm
Temperature Grade
OTHER
Terminal Position
DUAL
Additional Feature
AUTO/SELF REFRESH
Number of Functions
1
Number of Terminals
86
Number of Words Code
2M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Operating Temperature-Max
85 Cel
Operating Temperature-Min
-25 Cel
Supply Voltage-Max (Vsup)
3.3 V
Supply Voltage-Min (Vsup)
2.3 V
Supply Voltage-Nom (Vsup)
2.5 V
Peak Reflow Temperature (Cel)
240
Time@Peak Reflow Temperature-Max (s)
30