Samsung Semiconductor, Inc. K4S563233F-HN750 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K4S563233F-HN750

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90
类别
Semiconductors Memory ICs DRAMs SYNCHRONOUS DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.24
SB Code
8542.32.00.15

Width
8 mm
Length
13 mm
Technology
CMOS
Access Mode
FOUR BANK PAGE BURST
JESD-30 Code
R-PBGA-B90
Memory Width
32
Organization
8MX32
Package Code
TFBGA
Self Refresh
YES
JESD-609 Code
e1
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory Density
268435456 bit
Memory IC Type
SYNCHRONOUS DRAM
Operating Mode
SYNCHRONOUS
Terminal Pitch
0.8 mm
Access Time-Max
6 ns
Number of Ports
1
Number of Words
8388608 words
Terminal Finish
TIN SILVER COPPER
Seated Height-Max
1.2 mm
Temperature Grade
OTHER
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Number of Functions
1
Number of Terminals
90
Number of Words Code
8M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Operating Temperature-Max
85 Cel
Operating Temperature-Min
-25 Cel
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
2.7 V
Supply Voltage-Nom (Vsup)
3 V
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
260