K4S561633F-ZG1L
Samsung Semiconductor, Inc.
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.24
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeS-PBGA-B54
- Memory Width16
- Package CodeFBGA
- Package ShapeSQUARE
- Package StyleGRID ARRAY, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeSYNCHRONOUS DRAM
- Refresh Cycles8192
- DLA QualificationNot Qualified
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Memory Organization16MX16
- Number of Terminals54
- Terminal Pitch (mm)0.8
- Access Time-Max (ns)7
- Number of Words Code16M
- Memory Density (bits)268435456
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Number of Words (words)16777216
- Sequential Burst Length1,2,4,8,FP
- Standby Current-Max (A)0.0005
- Supply Current-Max (mA)165
- Interleaved Burst Length1,2,4,8
- Package Equivalence CodeBGA54,9X9,32
- Clock Frequency-Max (MHz)105
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-25
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