K4S51153LC-YG15
Samsung Semiconductor, Inc.
- 生命周期状态Discontinued
- REACHREACH compliant
- 说明Synchronous DRAM, 32MX16, 9ns, CMOS, PBGA54
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.28
- SB Code8542.32.00.15
- Width9.5 mm
- Length15.5 mm
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeFOUR BANK PAGE BURST
- JESD-30 CodeR-PBGA-B54
- Memory Width16
- Organization32MX16
- Package CodeLFBGA
- Self RefreshYES
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, LOW PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density536870912 bit
- Memory IC TypeSYNCHRONOUS DRAM
- Operating ModeSYNCHRONOUS
- Refresh Cycles8192
- Terminal Pitch0.8 mm
- Access Time-Max9 ns
- Number of Ports1
- Number of Words33554432 words
- Terminal FinishTIN LEAD
- Seated Height-Max1.3 mm
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Supply Current-Max140 mA
- Number of Functions1
- Number of Terminals54
- Standby Current-Max0.0015 Amp
- Number of Words Code32M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Sequential Burst Length1,2,4,8,FP
- Interleaved Burst Length1,2,4,8
- Package Equivalence CodeBGA54,9X9,32
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-25 Cel
- Supply Voltage-Max (Vsup)2.7 V
- Supply Voltage-Min (Vsup)2.3 V
- Supply Voltage-Nom (Vsup)2.5 V
- Clock Frequency-Max (fCLK)66 MHz
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K4S51153LC-YG15