K4R881869E-FCK8
Samsung Semiconductor, Inc.
- 生命周期状态Discontinued
- REACHREACH compliant
- 说明Rambus DRAM, 16MX18, 45ns, CMOS, PBGA92
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.28
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PBGA-B92
- Memory Width18
- Organization16MX18
- Package CodeFBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density301989888 bit
- Memory IC TypeRAMBUS DRAM
- Terminal Pitch0.8 mm
- Access Time-Max45 ns
- Number of Words16777216 words
- Terminal PositionBOTTOM
- Supply Current-Max580 mA
- Number of Terminals92
- Number of Words Code16M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeBGA92,10X18,32
- Clock Frequency-Max (fCLK)800 MHz
- Moisture Sensitivity Level1
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K4R881869E-FCK8