K4R881869D-FCK8
Samsung Semiconductor, Inc.
- 生命周期状态Discontinued
- REACHREACH compliant
- 说明Rambus DRAM, 16MX18, 45ns, CMOS, PBGA92
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.28
- SB Code8542.32.00.15
- Width9.3 mm
- Length15.1 mm
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeBLOCK ORIENTED PROTOCOL
- JESD-30 CodeR-PBGA-B92
- Memory Width18
- Organization16MX18
- Package CodeTFBGA
- Self RefreshYES
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density301989888 bit
- Memory IC TypeRAMBUS DRAM
- Operating ModeSYNCHRONOUS
- Terminal Pitch0.8 mm
- Access Time-Max45 ns
- Number of Ports1
- Number of Words16777216 words
- Terminal FinishTIN LEAD
- Seated Height-Max1.08 mm
- Terminal PositionBOTTOM
- Additional FeatureSELF CONTAINED REFRESH
- Number of Functions1
- Number of Terminals92
- Number of Words Code16M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeBGA92,10X18,32
- Supply Voltage-Max (Vsup)2.63 V
- Supply Voltage-Min (Vsup)2.37 V
- Supply Voltage-Nom (Vsup)2.5 V
- Clock Frequency-Max (fCLK)800 MHz
K4R881869D-FCK8有0家供应商货源可供购买或竞价
提交询价
您的询价单将直接发送给我们的销售专家: Pari
提交询价
K4R881869D-FCK8