K4R761869A-GCM80
Samsung Semiconductor, Inc.
- 生命周期状态Discontinued
- 说明Rambus DRAM, 32MX18, CMOS, PBGA92
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.32
- SB Code8542.32.00.15
- Width13.4 mm
- Length15.1 mm
- TechnologyCMOS
- Access ModeBLOCK ORIENTED PROTOCOL
- JESD-30 CodeR-PBGA-B92
- Memory Width18
- Organization32MX18
- Package CodeVFBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density603979776 bit
- Memory IC TypeRAMBUS DRAM
- Operating ModeSYNCHRONOUS
- Terminal Pitch0.8 mm
- Number of Ports1
- Number of Words33554432 words
- Seated Height-Max1 mm
- Terminal PositionBOTTOM
- Additional FeatureSELF CONTAINED REFRESH
- Number of Functions1
- Number of Terminals92
- Number of Words Code32M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Supply Voltage-Max (Vsup)2.63 V
- Supply Voltage-Min (Vsup)2.37 V
- Supply Voltage-Nom (Vsup)2.5 V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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K4R761869A-GCM80