K4R761869A-GCM8
Samsung Semiconductor, Inc.
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- 说明Rambus DRAM, 32MX18, 40ns, CMOS, PBGA92
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.32
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PBGA-B92
- Memory Width18
- Organization32MX18
- Package CodeFBGA
- JESD-609 Codee1
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density603979776 bit
- Memory IC TypeRAMBUS DRAM
- Terminal Pitch0.8 mm
- Access Time-Max40 ns
- Number of Words33554432 words
- Terminal FinishTIN SILVER COPPER
- Terminal PositionBOTTOM
- Number of Terminals92
- Number of Words Code32M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeBGA92,10X18,32
- Operating Temperature-Min0 Cel
- Moisture Sensitivity Level3
- Peak Reflow Temperature (Cel)260
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K4R761869A-GCM8