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K4R571669E-GCT9

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc. K4R571669E-GCT9
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.24
  • SB Code
    8542.32.00.15
  • I/O Type
    COMMON
  • Technology
    CMOS
  • JESD-30 Code
    R-PBGA-B84
  • Memory Width
    16
  • Organization
    16MX16
  • Package Code
    FBGA
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • Memory Density
    268435456 bit
  • Memory IC Type
    RAMBUS DRAM
  • Terminal Pitch
    0.8 mm
  • Access Time-Max
    32 ns
  • Number of Words
    16777216 words
  • Terminal Position
    BOTTOM
  • Number of Terminals
    84
  • Number of Words Code
    16M
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Output Characteristics
    3-STATE
  • Package Equivalence Code
    BGA84,10X16,32
  • Clock Frequency-Max (fCLK)
    1066 MHz
  • Moisture Sensitivity Level
    3
  • Peak Reflow Temperature (Cel)
    260

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