K4R441869B-NCK7
Samsung Semiconductor, Inc.
- 生命周期状态Discontinued
- REACHREACH compliant
- 说明Rambus DRAM, 8MX18, 45ns, CMOS, PBGA62
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.24
- SB Code8542.32.00.15
- Width10.2 mm
- Length12 mm
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeBLOCK ORIENTED PROTOCOL
- JESD-30 CodeR-PBGA-B62
- Memory Width18
- Organization8MX18
- Package CodeVBGA
- Self RefreshYES
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, VERY THIN PROFILE Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density150994944 bit
- Memory IC TypeRAMBUS DRAM
- Operating ModeSYNCHRONOUS
- Refresh Cycles16384
- Terminal Pitch0.8 mm
- Access Time-Max45 ns
- Number of Ports1
- Number of Words8388608 words
- Terminal FinishTIN LEAD
- Seated Height-Max1 mm
- Terminal PositionBOTTOM
- Additional FeatureSELF CONTAINED REFRESH
- Number of Functions1
- Number of Terminals62
- Number of Words Code8M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeBGA62,12X9,40/32
- Supply Voltage-Max (Vsup)2.63 V
- Supply Voltage-Min (Vsup)2.37 V
- Supply Voltage-Nom (Vsup)2.5 V
- Clock Frequency-Max (fCLK)711 MHz
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K4R441869B-NCK7