Samsung Semiconductor, Inc. K4R271669H-DCS8T | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K4R271669H-DCS8T

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Rambus DRAM, 8MX16, 45ns, CMOS, PBGA54
类别
Semiconductors Memory ICs DRAMs RAMBUS DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

Width
11.8 mm
Length
12 mm
I/O Type
COMMON
Technology
CMOS
Access Mode
BLOCK ORIENTED PROTOCOL
JESD-30 Code
R-PBGA-B54
Memory Width
16
Organization
8MX16
Package Code
TBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE Meter
Surface Mount
YES
Terminal Form
BALL
Memory Density
134217728 bit
Memory IC Type
RAMBUS DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
16384
Terminal Pitch
1.27 mm
Access Time-Max
45 ns
Number of Ports
1
Number of Words
8388608 words
Seated Height-Max
1.2 mm
Terminal Position
BOTTOM
Additional Feature
SELF CONTAINED REFRESH
Supply Current-Max
400 mA
Number of Functions
1
Number of Terminals
54
Number of Words Code
8M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Package Equivalence Code
BGA54,7X9,50
Supply Voltage-Max (Vsup)
2.63 V
Supply Voltage-Min (Vsup)
2.37 V
Supply Voltage-Nom (Vsup)
2.5 V
Clock Frequency-Max (fCLK)
400 MHz
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
260