K4R271669E-RCS80
Samsung Semiconductor, Inc.
- 生命周期状态Discontinued
- 说明Rambus DRAM, 8MX16, CMOS, PBGA54
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- Width12 mm
- Length11.8 mm
- TechnologyCMOS
- Access ModeBLOCK ORIENTED PROTOCOL
- JESD-30 CodeR-PBGA-B54
- Memory Width16
- Organization8MX16
- Package CodeLBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, LOW PROFILE Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density134217728 bit
- Memory IC TypeRAMBUS DRAM
- Operating ModeSYNCHRONOUS
- Terminal Pitch1.27 mm
- Number of Ports1
- Number of Words8388608 words
- Seated Height-Max1.25 mm
- Terminal PositionBOTTOM
- Additional FeatureSELF CONTAINED REFRESH
- Number of Functions1
- Number of Terminals54
- Number of Words Code8M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Supply Voltage-Max (Vsup)2.63 V
- Supply Voltage-Min (Vsup)2.37 V
- Supply Voltage-Nom (Vsup)2.5 V
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K4R271669E-RCS80