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K4M641633K-BN1H0

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc. K4M641633K-BN1H0
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.02
  • SB Code
    8542.32.00.15
  • Width
    8 mm
  • Length
    8 mm
  • I/O Type
    COMMON
  • Technology
    CMOS
  • Access Mode
    FOUR BANK PAGE BURST
  • JESD-30 Code
    S-PBGA-B54
  • Memory Width
    16
  • Organization
    4MX16
  • Package Code
    VFBGA
  • Self Refresh
    YES
  • JESD-609 Code
    e1
  • Package Shape
    SQUARE
  • Package Style
    GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • Memory Density
    67108864 bit
  • Memory IC Type
    SYNCHRONOUS DRAM
  • Operating Mode
    SYNCHRONOUS
  • Refresh Cycles
    4096
  • Terminal Pitch
    0.8 mm
  • Access Time-Max
    7 ns
  • Number of Ports
    1
  • Number of Words
    4194304 words
  • Terminal Finish
    TIN SILVER COPPER
  • Seated Height-Max
    1 mm
  • Temperature Grade
    OTHER
  • Terminal Position
    BOTTOM
  • Additional Feature
    AUTO/SELF REFRESH
  • Supply Current-Max
    110 mA
  • Number of Functions
    1
  • Number of Terminals
    54
  • Standby Current-Max
    0.0005 Amp
  • Number of Words Code
    4M
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Output Characteristics
    3-STATE
  • Sequential Burst Length
    1,2,4,8,FP
  • Interleaved Burst Length
    1,2,4,8
  • Package Equivalence Code
    BGA54,9X9,32
  • Operating Temperature-Max
    85 Cel
  • Operating Temperature-Min
    -25 Cel
  • Supply Voltage-Max (Vsup)
    3.6 V
  • Supply Voltage-Min (Vsup)
    2.7 V
  • Supply Voltage-Nom (Vsup)
    3 V
  • Clock Frequency-Max (fCLK)
    111 MHz
  • Moisture Sensitivity Level
    2

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K4M641633K-BN1H0