K4M56163LG-RL1L
Samsung Semiconductor, Inc.
- 生命周期状态Discontinued
- 说明Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.24
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeS-PBGA-B54
- Memory Width16
- Organization16MX16
- Package CodeFBGA
- Package ShapeSQUARE
- Package StyleGRID ARRAY, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density268435456 bit
- Memory IC TypeSYNCHRONOUS DRAM
- Refresh Cycles8192
- Terminal Pitch0.8 mm
- Access Time-Max7 ns
- Number of Words16777216 words
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Supply Current-Max110 mA
- Number of Terminals54
- Standby Current-Max0.001 Amp
- Number of Words Code16M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Sequential Burst Length1,2,4,8,FP
- Interleaved Burst Length1,2,4,8
- Package Equivalence CodeBGA54,9X9,32
- Operating Temperature-Max70 Cel
- Operating Temperature-Min-25 Cel
- Supply Voltage-Nom (Vsup)2.5 V
- Clock Frequency-Max (fCLK)111 MHz
- Moisture Sensitivity Level1
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K4M56163LG-RL1L