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K4M513233E-EF1H

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc. K4M513233E-EF1H
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.28
  • SB Code
    8542.32.00.15
  • I/O Type
    COMMON
  • Technology
    CMOS
  • JESD-30 Code
    R-PBGA-B90
  • Memory Width
    32
  • Organization
    16MX32
  • Package Code
    FBGA
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • Memory Density
    536870912 bit
  • Memory IC Type
    SYNCHRONOUS DRAM
  • Refresh Cycles
    8192
  • Terminal Pitch
    0.8 mm
  • Access Time-Max
    7 ns
  • Number of Words
    16777216 words
  • Temperature Grade
    OTHER
  • Terminal Position
    BOTTOM
  • Supply Current-Max
    330 mA
  • Number of Terminals
    90
  • Standby Current-Max
    0.0015 Amp
  • Number of Words Code
    16M
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Output Characteristics
    3-STATE
  • Sequential Burst Length
    1,2,4,8,FP
  • Interleaved Burst Length
    1,2,4,8
  • Package Equivalence Code
    BGA90,9X15,32
  • Operating Temperature-Max
    70 Cel
  • Operating Temperature-Min
    -25 Cel
  • Clock Frequency-Max (fCLK)
    105 MHz
  • Moisture Sensitivity Level
    3
  • Peak Reflow Temperature (Cel)
    260

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